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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B4G0846D-BYNB

Samsung Semiconductor - K4B4G0846D-BYNB

KEY Part #: K7359676

[27150piezak Stock]

    Taldea zenbakia:
    K4B4G0846D-BYNB
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: MODULE, LPDDR4, LPDDR4X, LPDDR5, LPDDR3, SLC Nand, DDR4 and HBM Flarebolt ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B4G0846D-BYNB electronic components. K4B4G0846D-BYNB can be shipped within 24 hours after order. If you have any demands for K4B4G0846D-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846D-BYNB Produktuen atributuak

    Taldea zenbakia : K4B4G0846D-BYNB
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Series : DDR3
    dentsitatea : 4 Gb
    Org. : 512M x 8
    Abiadura : 2133 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : 0 ~ 85 °C
    Package : 78FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    How Will 5G Impact on Memory?
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Mission Peak Reference Server System for NGSFF SSD
    Speed for the next generation of mobile devices
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Inside the building blocks of the 5G future
    Samsung Memory Solutions for Automotive
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