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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B4G1646D-BMK0

Samsung Semiconductor - K4B4G1646D-BMK0

KEY Part #: K7359693

[20248piezak Stock]

    Taldea zenbakia:
    K4B4G1646D-BMK0
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: DDR3, HBM Flarebolt, GDDR6, HBM Aquabolt, LPDDR4, GDDR5, SLC Nand and LPDDR3 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B4G1646D-BMK0 electronic components. K4B4G1646D-BMK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BMK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BMK0 Produktuen atributuak

    Taldea zenbakia : K4B4G1646D-BMK0
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 4 Gb
    Org. : 256M x 16
    Abiadura : 1600 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    How Will 5G Impact on Memory?
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    The future of NAND technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
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