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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B1G1646I-BCMA

Samsung Semiconductor - K4B1G1646I-BCMA

KEY Part #: K7359640

[19161piezak Stock]

    Taldea zenbakia:
    K4B1G1646I-BCMA
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: DDR3, LPDDR3, HBM Flarebolt, LPDDR4X, MODULE, SLC Nand, GDDR6 and LPDDR5 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B1G1646I-BCMA electronic components. K4B1G1646I-BCMA can be shipped within 24 hours after order. If you have any demands for K4B1G1646I-BCMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G1646I-BCMA Produktuen atributuak

    Taldea zenbakia : K4B1G1646I-BCMA
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 1 Gb
    Org. : 64M x 16
    Abiadura : 1866 Mbps
    Tentsioa : 1.5 V
    Aldi baterako. : 0 ~ 85 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    The future of NAND technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Memory Solutions for Automotive
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    High Bandwidth Memory is Catching on for Data-intensive Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
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