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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BHMA

Samsung Semiconductor - K4B2G1646F-BHMA

KEY Part #: K7359661

[17431piezak Stock]

    Taldea zenbakia:
    K4B2G1646F-BHMA
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: DDR4, LPDDR3, MODULE, HBM Flarebolt, LPDDR5, HBM Aquabolt, GDDR5 and LPDDR4X ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B2G1646F-BHMA electronic components. K4B2G1646F-BHMA can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BHMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BHMA Produktuen atributuak

    Taldea zenbakia : K4B2G1646F-BHMA
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 2 Gb
    Org. : 128M x 16
    Abiadura : 1866 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : -40 ~ 105 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Evolving Mobile Solutions: Samsung at MWC 2018
    The Ultra-Low Latency SSD, Z-SSD
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Mission Peak Reference Server System for NGSFF SSD
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Automotive Driven by Small Packages Under the Hood
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Speed for the next generation of mobile devices
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