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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
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  3. DRAM
  4. DDR3
  5. K4B4G1646E-BYMA

Samsung Semiconductor - K4B4G1646E-BYMA

KEY Part #: K7359703

[19442piezak Stock]

    Taldea zenbakia:
    K4B4G1646E-BYMA
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: LPDDR4X, LPDDR5, HBM Flarebolt, LPDDR4, SLC Nand, GDDR5, MODULE and DDR4 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B4G1646E-BYMA electronic components. K4B4G1646E-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BYMA Produktuen atributuak

    Taldea zenbakia : K4B4G1646E-BYMA
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 4 Gb
    Org. : 512M x 8
    Abiadura : 1866 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : 0 ~ 85 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Inside the building blocks of the 5G future
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Mission Peak Reference Server System for NGSFF SSD
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
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