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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B4G0846E-BMK0

Samsung Semiconductor - K4B4G0846E-BMK0

KEY Part #: K7359679

[20829piezak Stock]

    Taldea zenbakia:
    K4B4G0846E-BMK0
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: MODULE, LPDDR4X, GDDR6, GDDR5, HBM Flarebolt, LPDDR3, SLC Nand and LPDDR4 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B4G0846E-BMK0 electronic components. K4B4G0846E-BMK0 can be shipped within 24 hours after order. If you have any demands for K4B4G0846E-BMK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846E-BMK0 Produktuen atributuak

    Taldea zenbakia : K4B4G0846E-BMK0
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production
    Series : DDR3
    dentsitatea : 4 Gb
    Org. : 512M x 8
    Abiadura : 1600 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 78FBGA
    Produktuen Status : Mass Production

    Azken berriak

    5G and Memory - from Connected Thinking to Connected Living
    The future of NAND technology
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Z-SSD SZ985
    How Will 5G Impact on Memory?
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    The Ultra-Low Latency SSD, Z-SSD
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
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