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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BMK0

Samsung Semiconductor - K4B4G1646E-BMK0

KEY Part #: K7359701

[19193piezak Stock]

    Taldea zenbakia:
    K4B4G1646E-BMK0
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: LPDDR3, LPDDR4, SLC Nand, HBM Flarebolt, GDDR5, LPDDR5, HBM Aquabolt and DDR4 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B4G1646E-BMK0 electronic components. K4B4G1646E-BMK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BMK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BMK0 Produktuen atributuak

    Taldea zenbakia : K4B4G1646E-BMK0
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 4 Gb
    Org. : 256M x 16
    Abiadura : 1600 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Autonomous Driving and the Quest for Safety
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Evolving Mobile Solutions: Samsung at MWC 2018
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