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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. K4F6E3D4HB-MFCJ

Samsung Semiconductor - K4F6E3D4HB-MFCJ

KEY Part #: K7359764

[17160piezak Stock]

    Taldea zenbakia:
    K4F6E3D4HB-MFCJ
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: DDR4, LPDDR3, LPDDR4, HBM Aquabolt, MODULE, GDDR6, DDR3 and HBM Flarebolt ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4F6E3D4HB-MFCJ electronic components. K4F6E3D4HB-MFCJ can be shipped within 24 hours after order. If you have any demands for K4F6E3D4HB-MFCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F6E3D4HB-MFCJ Produktuen atributuak

    Taldea zenbakia : K4F6E3D4HB-MFCJ
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 16 Gb
    Org. : x32
    Abiadura : 3733 Mbps
    Tentsioa : 1.8 / 1.1 / 1.1 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Mission Peak Reference Server System for NGSFF SSD
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Autonomous Driving and the Quest for Safety
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
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