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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. K4F8E3S4HB-MFCJ

Samsung Semiconductor - K4F8E3S4HB-MFCJ

KEY Part #: K7359769

[24362piezak Stock]

    Taldea zenbakia:
    K4F8E3S4HB-MFCJ
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: GDDR5, HBM Flarebolt, DDR4, GDDR6, DDR3, LPDDR5, LPDDR4 and LPDDR3 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4F8E3S4HB-MFCJ electronic components. K4F8E3S4HB-MFCJ can be shipped within 24 hours after order. If you have any demands for K4F8E3S4HB-MFCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F8E3S4HB-MFCJ Produktuen atributuak

    Taldea zenbakia : K4F8E3S4HB-MFCJ
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 8 Gb
    Org. : x32
    Abiadura : 3733 Mbps
    Tentsioa : 1.8 / 1.1 / 1.1 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Unlocking the Power of Cloud Computing
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Memory Solutions for Automotive
    Autonomous Driving and the Quest for Safety
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Automotive Driven by Small Packages Under the Hood
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