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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. K4FHE3D4HM-MFCJ

Samsung Semiconductor - K4FHE3D4HM-MFCJ

KEY Part #: K7359780

[24245piezak Stock]

    Taldea zenbakia:
    K4FHE3D4HM-MFCJ
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: HBM Flarebolt, LPDDR4X, LPDDR5, LPDDR3, SLC Nand, DDR4, GDDR5 and HBM Aquabolt ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4FHE3D4HM-MFCJ electronic components. K4FHE3D4HM-MFCJ can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HM-MFCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HM-MFCJ Produktuen atributuak

    Taldea zenbakia : K4FHE3D4HM-MFCJ
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 24 Gb
    Org. : x32
    Abiadura : 3733 Mbps
    Tentsioa : 1.8 / 1.1 / 1.1 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    The future of NAND technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Z-SSD SZ985
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Autonomous Driving and the Quest for Safety
    Unlocking the Power of Cloud Computing
    Mass Production of Fifth-Generation V-NAND has Started
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