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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
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  5. K4FHE3D4HM-MHCJ

Samsung Semiconductor - K4FHE3D4HM-MHCJ

KEY Part #: K7359781

[20140piezak Stock]

    Taldea zenbakia:
    K4FHE3D4HM-MHCJ
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: DDR3, MODULE, SLC Nand, LPDDR4X, LPDDR5, GDDR5, LPDDR4 and LPDDR3 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4FHE3D4HM-MHCJ electronic components. K4FHE3D4HM-MHCJ can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HM-MHCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HM-MHCJ Produktuen atributuak

    Taldea zenbakia : K4FHE3D4HM-MHCJ
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 24 Gb
    Org. : x32
    Abiadura : 3733 Mbps
    Tentsioa : 1.8 / 1.1 / 1.1 V
    Aldi baterako. : -40 ~ 105 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Inside the building blocks of the 5G future
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Samsung Memory Solutions for Automotive
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    How Will 5G Impact on Memory?
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    The Ultra-Low Latency SSD, Z-SSD
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