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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
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  3. DRAM
  4. LPDDR4
  5. K4F6E3S4HM-GUCL

Samsung Semiconductor - K4F6E3S4HM-GUCL

KEY Part #: K7359768

[21588piezak Stock]

    Taldea zenbakia:
    K4F6E3S4HM-GUCL
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: SLC Nand, GDDR6, LPDDR5, GDDR5, MODULE, HBM Aquabolt, HBM Flarebolt and DDR3 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4F6E3S4HM-GUCL electronic components. K4F6E3S4HM-GUCL can be shipped within 24 hours after order. If you have any demands for K4F6E3S4HM-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F6E3S4HM-GUCL Produktuen atributuak

    Taldea zenbakia : K4F6E3S4HM-GUCL
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 16 Gb
    Org. : x32
    Abiadura : 4266 Mbps
    Tentsioa : 1.8 / 1.1 / 1.1 V
    Aldi baterako. : -40 ~ 125 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Mass Production of Fifth-Generation V-NAND has Started
    How Will 5G Impact on Memory?
    Automotive Driven by Small Packages Under the Hood
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Unlocking the Power of Cloud Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Inside the building blocks of the 5G future
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Bringing Artificial Intelligence to Devices Everywhere
    Autonomous Driving and the Quest for Safety
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