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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. LPDDR4
  5. K4F2E3S4HA-GHCL

Samsung Semiconductor - K4F2E3S4HA-GHCL

KEY Part #: K7359757

[18111piezak Stock]

    Taldea zenbakia:
    K4F2E3S4HA-GHCL
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: HBM Aquabolt, GDDR5, DDR4, LPDDR3, LPDDR4, MODULE, HBM Flarebolt and GDDR6 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4F2E3S4HA-GHCL electronic components. K4F2E3S4HA-GHCL can be shipped within 24 hours after order. If you have any demands for K4F2E3S4HA-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F2E3S4HA-GHCL Produktuen atributuak

    Taldea zenbakia : K4F2E3S4HA-GHCL
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 12 Gb
    Org. : x32
    Abiadura : 4266 Mbps
    Tentsioa : 1.8 / 1.1 / 1.1 V
    Aldi baterako. : -40 ~ 105 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Mission Peak Reference Server System for NGSFF SSD
    Inside the building blocks of the 5G future
    Speed for the next generation of mobile devices
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    The future of NAND technology
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