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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BYK0

Samsung Semiconductor - K4B2G1646F-BYK0

KEY Part #: K7359664

[26091piezak Stock]

    Taldea zenbakia:
    K4B2G1646F-BYK0
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: LPDDR3, LPDDR4, LPDDR4X, MODULE, GDDR5, DDR3, LPDDR5 and GDDR6 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B2G1646F-BYK0 electronic components. K4B2G1646F-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYK0 Produktuen atributuak

    Taldea zenbakia : K4B2G1646F-BYK0
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 2 Gb
    Org. : 128M x 16
    Abiadura : 1600 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : 0 ~ 85 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Unlocking the Power of Cloud Computing
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Autonomous Driving and the Quest for Safety
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    How Will 5G Impact on Memory?
    Bringing Artificial Intelligence to Devices Everywhere
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
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