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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BMMA

Samsung Semiconductor - K4B2G1646F-BMMA

KEY Part #: K7359663

[21752piezak Stock]

    Taldea zenbakia:
    K4B2G1646F-BMMA
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: HBM Flarebolt, DDR3, SLC Nand, LPDDR4X, LPDDR5, GDDR6, HBM Aquabolt and GDDR5 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4B2G1646F-BMMA electronic components. K4B2G1646F-BMMA can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BMMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BMMA Produktuen atributuak

    Taldea zenbakia : K4B2G1646F-BMMA
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production
    Series : DDR3
    dentsitatea : 2 Gb
    Org. : 128M x 16
    Abiadura : 1600 Mbps
    Tentsioa : 1.35 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Inside the building blocks of the 5G future
    Autonomous Driving and the Quest for Safety
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    [Video] 5G memory solutions : 5G. All in the Memory.
    Unlocking the Power of Cloud Computing
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Speed for the next generation of mobile devices
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
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