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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. LPDDR4X
  5. K4UBE3D4AM-GFCL

Samsung Semiconductor - K4UBE3D4AM-GFCL

KEY Part #: K7359749

[14118piezak Stock]

    Taldea zenbakia:
    K4UBE3D4AM-GFCL
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: HBM Flarebolt, LPDDR5, DDR3, DDR4, MODULE, SLC Nand, GDDR6 and HBM Aquabolt ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4UBE3D4AM-GFCL electronic components. K4UBE3D4AM-GFCL can be shipped within 24 hours after order. If you have any demands for K4UBE3D4AM-GFCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UBE3D4AM-GFCL Produktuen atributuak

    Taldea zenbakia : K4UBE3D4AM-GFCL
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 32 Gb
    Org. : x32
    Abiadura : 4266 Mbps
    Tentsioa : 1.8 / 1.1 / 0.6 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Unlocking the Power of Cloud Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Memory Solutions for Automotive
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Z-SSD SZ985
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
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