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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. LPDDR4X
  5. K4U6E3S4AM-GHCL

Samsung Semiconductor - K4U6E3S4AM-GHCL

KEY Part #: K7359743

[19582piezak Stock]

    Taldea zenbakia:
    K4U6E3S4AM-GHCL
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: LPDDR4X, MODULE, DDR3, HBM Flarebolt, LPDDR5, DDR4, GDDR6 and LPDDR3 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4U6E3S4AM-GHCL electronic components. K4U6E3S4AM-GHCL can be shipped within 24 hours after order. If you have any demands for K4U6E3S4AM-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U6E3S4AM-GHCL Produktuen atributuak

    Taldea zenbakia : K4U6E3S4AM-GHCL
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 16 Gb
    Org. : x32
    Abiadura : 4266 Mbps
    Tentsioa : 1.8 / 1.1 / 0.6 V
    Aldi baterako. : -40 ~ 105 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    The future of NAND technology
    Autonomous Driving and the Quest for Safety
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Z-SSD SZ985
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Memory Solutions for Automotive
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
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