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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. LPDDR4X
  5. K4U2E3S4AA-GFCL

Samsung Semiconductor - K4U2E3S4AA-GFCL

KEY Part #: K7359738

[18219piezak Stock]

    Taldea zenbakia:
    K4U2E3S4AA-GFCL
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: DDR3, LPDDR4X, LPDDR4, LPDDR3, SLC Nand, HBM Aquabolt, LPDDR5 and HBM Flarebolt ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4U2E3S4AA-GFCL electronic components. K4U2E3S4AA-GFCL can be shipped within 24 hours after order. If you have any demands for K4U2E3S4AA-GFCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U2E3S4AA-GFCL Produktuen atributuak

    Taldea zenbakia : K4U2E3S4AA-GFCL
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
    Series : DDR3
    dentsitatea : 12 Gb
    Org. : x32
    Abiadura : 4266 Mbps
    Tentsioa : 1.8 / 1.1 / 0.6 V
    Aldi baterako. : -40 ~ 95 °C
    Package : 200FBGA
    Produktuen Status : Mass Production

    Azken berriak

    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Memory Solutions for Automotive
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Inside the building blocks of the 5G future
    The future of NAND technology
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    5G and Memory - from Connected Thinking to Connected Living
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
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