Vishay Semiconductor Diodes Division - RS2JHE3_A/H

KEY Part #: K6427118

RS2JHE3_A/H Prezioak (USD) [525400piezak Stock]

  • 1 pcs$0.07040
  • 3,000 pcs$0.06437

Taldea zenbakia:
RS2JHE3_A/H
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 600V 1.5A DO214AA. Rectifiers 1.5A, 600V, 250nS SMB, FS, GPP SM RECT
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Diodoak - RF, Transistoreak - IGBTak - Arrays, Transistoreak - Elkartze programagarria, Transistoreak - Bipolarrak (BJT) - RF, Tiristoreak - TRIACak, Transistoreak - FETak, MOSFETak - Bakarrak and Transistoreak - IGBTak - Moduluak ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division RS2JHE3_A/H electronic components. RS2JHE3_A/H can be shipped within 24 hours after order. If you have any demands for RS2JHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS2JHE3_A/H Produktuen atributuak

Taldea zenbakia : RS2JHE3_A/H
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 600V 1.5A DO214AA
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 600V
Oraingoa - Batez besteko laukizatua (Io) : 1.5A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.3V @ 1.5A
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 250ns
Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 600V
Edukiera @ Vr, F : 17pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AA, SMB
Hornitzaileentzako gailu paketea : DO-214AA (SMB)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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