EGL34GHE3_A/I Prezioak (USD) [732237piezak Stock]
- 1 pcs$0.05051
- Taldea zenbakia:
- EGL34GHE3_A/I
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5A,400V,50NS AEC-Q101 Qualified
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - IGBTak - Moduluak, Transistoreak - Bipolarrak (BJT) - Matrizeak, Tiristoreak - DIACak, SIDACak, Diodoak - RF, Transistoreak - Xede Berezia, Tiristorrak - EKTak, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez and Transistoreak - IGBTak - Arrays ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division EGL34GHE3_A/I electronic components. EGL34GHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL34GHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL34GHE3_A/I Produktuen atributuak
Taldea zenbakia :
EGL34GHE3_A/I
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 400V 500MA DO213
Series :
Automotive, AEC-Q101, Superectifier®
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
400V
Oraingoa - Batez besteko laukizatua (Io) :
500mA
Tentsioa - Aurrera (Vf) (Max) @ If :
1.35V @ 500mA
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
50ns
Oraingoa - alderantzizko ihesa @ Vr :
5µA @ 400V
Edukiera @ Vr, F :
7pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-213AA (Glass)
Hornitzaileentzako gailu paketea :
DO-213AA (GL34)
Eragiketa tenperatura - Junction :
-65°C ~ 175°C
Azken berriak
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