IDC21D120T6MX1SA2 Prezioak (USD) [26568piezak Stock]
- 1 pcs$1.55126
- Taldea zenbakia:
- IDC21D120T6MX1SA2
- fabrikatzailea:
- Infineon Technologies
- Deskribapen zehatza:
- DIODE GEN PURP 1.2KV 35A WAFER.
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - FETak, MOSFETak - RF, Transistoreak - IGBTak - Moduluak, Transistoreak - Elkartze programagarria, Transistoreak - FETak, MOSFETak - Arrays, Transistoreak - Bipolarrak (BJT) - Matrizeak, Diodoak - Errektifikatzaileak - Bakarrak, Diodoak - Zubi zatitzaileak and Transistoreak - Xede Berezia ...
- Abantaila lehiakorra:
- We specialize in Infineon Technologies IDC21D120T6MX1SA2 electronic components. IDC21D120T6MX1SA2 can be shipped within 24 hours after order. If you have any demands for IDC21D120T6MX1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC21D120T6MX1SA2 Produktuen atributuak
Taldea zenbakia :
IDC21D120T6MX1SA2
fabrikatzailea :
Infineon Technologies
deskribapena :
DIODE GEN PURP 1.2KV 35A WAFER
Series :
-
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
1200V
Oraingoa - Batez besteko laukizatua (Io) :
35A
Tentsioa - Aurrera (Vf) (Max) @ If :
2.05V @ 35A
Abiadura :
Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
-
Oraingoa - alderantzizko ihesa @ Vr :
7.7µA @ 1200V
Edukiera @ Vr, F :
-
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
Die
Hornitzaileentzako gailu paketea :
Sawn on foil
Eragiketa tenperatura - Junction :
-40°C ~ 175°C
Azken berriak
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