Vishay Semiconductor Diodes Division - BAV21W-HE3-18

KEY Part #: K6439873

BAV21W-HE3-18 Prezioak (USD) [2192764piezak Stock]

  • 1 pcs$0.01687
  • 10,000 pcs$0.01560

Taldea zenbakia:
BAV21W-HE3-18
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristoreak - TRIACak, Transistoreak - Bipolarrak (BJT) - Matrizeak, Transistoreak - Elkartze programagarria, Transistoreak - Bipolarrak (BJT) - Bakarka, Tiristoreak - DIACak, SIDACak, Transistoreak - IGBTak - Arrays, Potentzia kontrolatzeko moduluak and Diodoak - Errektifikatzaileak - Bakarrak ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division BAV21W-HE3-18 electronic components. BAV21W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV21W-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21W-HE3-18 Produktuen atributuak

Taldea zenbakia : BAV21W-HE3-18
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 200V 250MA SOD123
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 200V
Oraingoa - Batez besteko laukizatua (Io) : 250mA (DC)
Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 100mA
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 50ns
Oraingoa - alderantzizko ihesa @ Vr : 100nA @ 150V
Edukiera @ Vr, F : 1.5pF @ 0V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : SOD-123
Hornitzaileentzako gailu paketea : SOD-123
Eragiketa tenperatura - Junction : 175°C (Max)

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