Vishay Semiconductor Diodes Division - S3M-E3/57T

KEY Part #: K6455883

S3M-E3/57T Prezioak (USD) [466650piezak Stock]

  • 1 pcs$0.07926
  • 850 pcs$0.06907
  • 1,700 pcs$0.05180
  • 2,550 pcs$0.04748
  • 5,950 pcs$0.04461
  • 21,250 pcs$0.04173
  • 42,500 pcs$0.03837

Taldea zenbakia:
S3M-E3/57T
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 1KV 3A DO214AB. Rectifiers 3.0 Amp 1000 Volt
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristoreak - DIACak, SIDACak, Transistoreak - FETak, MOSFETak - Bakarrak, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Diodoak - RF, Transistoreak - Bipolarrak (BJT) - Matrizeak, Transistoreak - JFETak, Diodoak - Zubi zatitzaileak and Transistoreak - Xede Berezia ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division S3M-E3/57T electronic components. S3M-E3/57T can be shipped within 24 hours after order. If you have any demands for S3M-E3/57T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S3M-E3/57T Produktuen atributuak

Taldea zenbakia : S3M-E3/57T
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 1KV 3A DO214AB
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 1000V
Oraingoa - Batez besteko laukizatua (Io) : 3A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.15V @ 2.5A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 2.5µs
Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 1000V
Edukiera @ Vr, F : 60pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AB, SMC
Hornitzaileentzako gailu paketea : DO-214AB (SMC)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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