1N4150W-HE3-08 Prezioak (USD) [2033073piezak Stock]
- 1 pcs$0.01920
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Taldea zenbakia:
- 1N4150W-HE3-08
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - IGBTak - Arrays, Diodoak - Zener - Arrays, Transistoreak - FETak, MOSFETak - Bakarrak, Transistoreak - IGBTak - Bakarka, Transistoreak - Elkartze programagarria, Tiristoreak - DIACak, SIDACak, Tiristoreak - TRIACak and Diodoak - Errektifikatzaileak - Bakarrak ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-08 electronic components. 1N4150W-HE3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-08 Produktuen atributuak
Taldea zenbakia :
1N4150W-HE3-08
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 50V 200MA SOD123
Series :
-
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
50V
Oraingoa - Batez besteko laukizatua (Io) :
200mA
Tentsioa - Aurrera (Vf) (Max) @ If :
1V @ 200mA
Abiadura :
Small Signal =< 200mA (Io), Any Speed
Alderantzizko berreskurapen denbora (trr) :
4ns
Oraingoa - alderantzizko ihesa @ Vr :
100nA @ 50V
Edukiera @ Vr, F :
2.5pF @ 0V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
SOD-123
Hornitzaileentzako gailu paketea :
SOD-123
Eragiketa tenperatura - Junction :
-55°C ~ 150°C
Azken berriak
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