Toshiba Semiconductor and Storage - 1SS352,H3F

KEY Part #: K6458215

1SS352,H3F Prezioak (USD) [3056256piezak Stock]

  • 1 pcs$0.01277
  • 3,000 pcs$0.01271
  • 6,000 pcs$0.01146
  • 15,000 pcs$0.00997
  • 30,000 pcs$0.00897
  • 75,000 pcs$0.00797
  • 150,000 pcs$0.00664

Taldea zenbakia:
1SS352,H3F
fabrikatzailea:
Toshiba Semiconductor and Storage
Deskribapen zehatza:
DIODE GEN PURP 80V 100MA SC76-2. Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Diodoak - Zubi zatitzaileak, Transistoreak - IGBTak - Moduluak, Transistoreak - Xede Berezia, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Diodoak - Zener - Arrays, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Tiristorrak - SCRak - Moduluak and Transistoreak - FETak, MOSFETak - Arrays ...
Abantaila lehiakorra:
We specialize in Toshiba Semiconductor and Storage 1SS352,H3F electronic components. 1SS352,H3F can be shipped within 24 hours after order. If you have any demands for 1SS352,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS352,H3F Produktuen atributuak

Taldea zenbakia : 1SS352,H3F
fabrikatzailea : Toshiba Semiconductor and Storage
deskribapena : DIODE GEN PURP 80V 100MA SC76-2
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 80V
Oraingoa - Batez besteko laukizatua (Io) : 100mA
Tentsioa - Aurrera (Vf) (Max) @ If : 1.2V @ 100mA
Abiadura : Small Signal =< 200mA (Io), Any Speed
Alderantzizko berreskurapen denbora (trr) : 4ns
Oraingoa - alderantzizko ihesa @ Vr : 500nA @ 80V
Edukiera @ Vr, F : 3pF @ 0V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : SC-76A
Hornitzaileentzako gailu paketea : SC-76-2
Eragiketa tenperatura - Junction : 125°C (Max)

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