Vishay Semiconductor Diodes Division - SE20AFBHM3/6B

KEY Part #: K6458148

SE20AFBHM3/6B Prezioak (USD) [914813piezak Stock]

  • 1 pcs$0.04267
  • 14,000 pcs$0.04245

Taldea zenbakia:
SE20AFBHM3/6B
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristorrak - SCRak - Moduluak, Tiristorrak - EKTak, Transistoreak - Bipolarrak (BJT) - Bakarka, Diodoak - Errektifikatzaileak - Arrays, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - Bipolarrak (BJT) - Matrizeak, Diodoak - RF and Transistoreak - FETak, MOSFETak - Arrays ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division SE20AFBHM3/6B electronic components. SE20AFBHM3/6B can be shipped within 24 hours after order. If you have any demands for SE20AFBHM3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE20AFBHM3/6B Produktuen atributuak

Taldea zenbakia : SE20AFBHM3/6B
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 100V 1.3A DO221AC
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 100V
Oraingoa - Batez besteko laukizatua (Io) : 1.3A (DC)
Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 2A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 1.2µs
Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 100V
Edukiera @ Vr, F : 12pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-221AC, SMA Flat Leads
Hornitzaileentzako gailu paketea : DO-221AC (SlimSMA)
Eragiketa tenperatura - Junction : -55°C ~ 175°C

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