1SS307E,L3F Prezioak (USD) [3127807piezak Stock]
- 1 pcs$0.19775
- 10 pcs$0.14040
- 25 pcs$0.11533
- 100 pcs$0.09223
- 250 pcs$0.06706
- 500 pcs$0.05449
- 1,000 pcs$0.04192
- 2,500 pcs$0.03773
- Taldea zenbakia:
- 1SS307E,L3F
- fabrikatzailea:
- Toshiba Semiconductor and Storage
- Deskribapen zehatza:
- DIODE GEN PURP 80V 100MA SC79. Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - FETak, MOSFETak - Bakarrak, Transistoreak - IGBTak - Arrays, Tiristorrak - SCRak - Moduluak, Transistoreak - FETak, MOSFETak - Arrays, Transistoreak - JFETak, Transistoreak - IGBTak - Moduluak, Diodoak - Zener - Arrays and Transistoreak - Elkartze programagarria ...
- Abantaila lehiakorra:
- We specialize in Toshiba Semiconductor and Storage 1SS307E,L3F electronic components. 1SS307E,L3F can be shipped within 24 hours after order. If you have any demands for 1SS307E,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1SS307E,L3F Produktuen atributuak
Taldea zenbakia :
1SS307E,L3F
fabrikatzailea :
Toshiba Semiconductor and Storage
deskribapena :
DIODE GEN PURP 80V 100MA SC79
Series :
-
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
80V
Oraingoa - Batez besteko laukizatua (Io) :
100mA
Tentsioa - Aurrera (Vf) (Max) @ If :
1.3V @ 100mA
Abiadura :
Small Signal =< 200mA (Io), Any Speed
Alderantzizko berreskurapen denbora (trr) :
-
Oraingoa - alderantzizko ihesa @ Vr :
10nA @ 80V
Edukiera @ Vr, F :
6pF @ 0V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
SC-79, SOD-523
Hornitzaileentzako gailu paketea :
SC-79
Eragiketa tenperatura - Junction :
150°C (Max)
Azken berriak
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