US1G-E3/5AT Prezioak (USD) [885871piezak Stock]
- 1 pcs$0.04175
- 7,500 pcs$0.03508
- 15,000 pcs$0.03199
- 37,500 pcs$0.02993
- 52,500 pcs$0.02752
- Taldea zenbakia:
- US1G-E3/5AT
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 400V 1A DO214AC. Rectifiers 400 Volt 1.0A 50ns 30 Amp IFSM
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - FETak, MOSFETak - RF, Transistoreak - Bipolarrak (BJT) - Matrizeak, Tiristoreak - DIACak, SIDACak, Transistoreak - JFETak, Diodoak - Errektifikatzaileak - Bakarrak, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Transistoreak - Xede Berezia and Transistoreak - FETak, MOSFETak - Arrays ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division US1G-E3/5AT electronic components. US1G-E3/5AT can be shipped within 24 hours after order. If you have any demands for US1G-E3/5AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US1G-E3/5AT Produktuen atributuak
Taldea zenbakia :
US1G-E3/5AT
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 400V 1A DO214AC
Series :
-
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
400V
Oraingoa - Batez besteko laukizatua (Io) :
1A
Tentsioa - Aurrera (Vf) (Max) @ If :
1V @ 1A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
50ns
Oraingoa - alderantzizko ihesa @ Vr :
10µA @ 400V
Edukiera @ Vr, F :
15pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-214AC, SMA
Hornitzaileentzako gailu paketea :
DO-214AC (SMA)
Eragiketa tenperatura - Junction :
-55°C ~ 150°C
Azken berriak
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