Samsung Semiconductor - K4A8G165WB-BCWE

KEY Part #: K7359609

[24756piezak Stock]


    Taldea zenbakia:
    K4A8G165WB-BCWE
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: HBM Aquabolt, DDR3, LPDDR3, GDDR5, SLC Nand, LPDDR4X, GDDR6 and LPDDR5 ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor K4A8G165WB-BCWE electronic components. K4A8G165WB-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G165WB-BCWE Produktuen atributuak

    Taldea zenbakia : K4A8G165WB-BCWE
    fabrikatzailea : Samsung Semiconductor
    deskribapena : 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Series : DDR4
    dentsitatea : 8 Gb
    Org. : 512M x 16
    Abiadura : 3200 Mbps
    Tentsioa : 1.2 V
    Aldi baterako. : 0 ~ 85 °C
    Package : 96FBGA
    Produktuen Status : Mass Production

    Era berean, interesatuko zaizu
    • KHA844801X-MC12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MC13

      Samsung Semiconductor

      4 Gb 1024 2.4 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MN12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.