NSB8JTHE3_A/I Prezioak (USD) [104538piezak Stock]
- 1 pcs$0.37403
- 800 pcs$0.33139
- Taldea zenbakia:
- NSB8JTHE3_A/I
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Tiristoreak - DIACak, SIDACak, Transistoreak - FETak, MOSFETak - RF, Diodoak - RF, Diodoak - Errektifikatzaileak - Arrays, Tiristorrak - EKTak and Transistoreak - Bipolarrak (BJT) - Matrizeak ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/I electronic components. NSB8JTHE3_A/I can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/I Produktuen atributuak
Taldea zenbakia :
NSB8JTHE3_A/I
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 600V 8A TO263AB
Series :
Automotive, AEC-Q101
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
600V
Oraingoa - Batez besteko laukizatua (Io) :
8A
Tentsioa - Aurrera (Vf) (Max) @ If :
1.1V @ 8A
Abiadura :
Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
-
Oraingoa - alderantzizko ihesa @ Vr :
10µA @ 600V
Edukiera @ Vr, F :
55pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Hornitzaileentzako gailu paketea :
TO-263AB
Eragiketa tenperatura - Junction :
-55°C ~ 150°C
Azken berriak
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