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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. DRAM
  4. MODULE
  5. M393A8K40B2B-CTC

Samsung Semiconductor - M393A8K40B2B-CTC

KEY Part #: K7359909

[26035piezak Stock]

    Taldea zenbakia:
    M393A8K40B2B-CTC
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: HBM Flarebolt, HBM Aquabolt, LPDDR4, LPDDR5, MODULE, LPDDR4X, GDDR5 and SLC Nand ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor M393A8K40B2B-CTC electronic components. M393A8K40B2B-CTC can be shipped within 24 hours after order. If you have any demands for M393A8K40B2B-CTC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393A8K40B2B-CTC Produktuen atributuak

    Taldea zenbakia : M393A8K40B2B-CTC
    fabrikatzailea : Samsung Semiconductor
    deskribapena : DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production
    Series : DDR3
    DDR : DDR4
    DIMM Mota : RDIMM
    dentsitatea : 64 GB
    Rank x Org. : 4R x 4
    Abiadura : 2400 Mbps
    Tentsioa : 1.2 V
    Pin kopurua : 288
    Osagai Konposizio : (2H 3DS 8G x 4) x 36
    Produktuen Status : Mass Production

    Azken berriak

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Memory Solutions for Automotive
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Inside the building blocks of the 5G future
    High Bandwidth Memory is Catching on for Data-intensive Computing
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