Rohm Semiconductor - RR1LAM4STR

KEY Part #: K6455048

RR1LAM4STR Prezioak (USD) [1359915piezak Stock]

  • 1 pcs$0.02720
  • 3,000 pcs$0.02241
  • 6,000 pcs$0.01949
  • 15,000 pcs$0.01657
  • 30,000 pcs$0.01559
  • 75,000 pcs$0.01462
  • 150,000 pcs$0.01267

Taldea zenbakia:
RR1LAM4STR
fabrikatzailea:
Rohm Semiconductor
Deskribapen zehatza:
DIODE GEN PURP 400V 1A PMDTM. Rectifiers 500V Vr 1A Io Rectifying Diode
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - FETak, MOSFETak - Arrays, Transistoreak - IGBTak - Arrays, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Tiristorrak - EKTak, Diodoak - Errektifikatzaileak - Bakarrak, Transistoreak - FETak, MOSFETak - RF, Diodoak - Zener - Arrays and Tiristoreak - DIACak, SIDACak ...
Abantaila lehiakorra:
We specialize in Rohm Semiconductor RR1LAM4STR electronic components. RR1LAM4STR can be shipped within 24 hours after order. If you have any demands for RR1LAM4STR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RR1LAM4STR Produktuen atributuak

Taldea zenbakia : RR1LAM4STR
fabrikatzailea : Rohm Semiconductor
deskribapena : DIODE GEN PURP 400V 1A PMDTM
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 400V
Oraingoa - Batez besteko laukizatua (Io) : 1A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 1A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : -
Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 400V
Edukiera @ Vr, F : -
Muntatzeko mota : Surface Mount
Paketea / Kaxa : SOD-128
Hornitzaileentzako gailu paketea : PMDTM
Eragiketa tenperatura - Junction : 150°C (Max)

Era berean, interesatuko zaizu
  • RURD660S9A

    ON Semiconductor

    DIODE GEN PURP 600V 6A TO252-3. Diodes - General Purpose, Power, Switching 6A 600V

  • BAS116E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • 50WQ10FNTR

    SMC Diode Solutions

    DIODE SCHOTTKY 100V DPAK.

  • VS-50WQ04FN-M3

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 40V 5.5A DPAK. Schottky Diodes & Rectifiers Schottky - D-PAK-e3

  • SD103AW-G3-08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 350MA 40V SOD123. Schottky Diodes & Rectifiers 5uA 40Volt 15A IFSM

  • SD103BW-E3-08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 350MA 30V SOD123. Schottky Diodes & Rectifiers 5uA 30Volt 15A IFSM