Vishay Semiconductor Diodes Division - UH2BHE3_A/H

KEY Part #: K6457189

UH2BHE3_A/H Prezioak (USD) [384070piezak Stock]

  • 1 pcs$0.09630
  • 4,500 pcs$0.08805

Taldea zenbakia:
UH2BHE3_A/H
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2A,100V,25ns, SMB Planar FER RECT, SMD
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - JFETak, Tiristorrak - SCRak - Moduluak, Transistoreak - IGBTak - Arrays, Diodoak - Zener - Arrays, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Tiristoreak - TRIACak, Transistoreak - FETak, MOSFETak - RF and Transistoreak - IGBTak - Bakarka ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division UH2BHE3_A/H electronic components. UH2BHE3_A/H can be shipped within 24 hours after order. If you have any demands for UH2BHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH2BHE3_A/H Produktuen atributuak

Taldea zenbakia : UH2BHE3_A/H
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 100V 2A DO214AA
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 100V
Oraingoa - Batez besteko laukizatua (Io) : 2A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.05V @ 2A
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 25ns
Oraingoa - alderantzizko ihesa @ Vr : 2µA @ 100V
Edukiera @ Vr, F : 42pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AA, SMB
Hornitzaileentzako gailu paketea : DO-214AA (SMB)
Eragiketa tenperatura - Junction : -55°C ~ 175°C

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