Vishay Semiconductor Diodes Division - S1GHE3_A/I

KEY Part #: K6456014

S1GHE3_A/I Prezioak (USD) [1218837piezak Stock]

  • 1 pcs$0.03035
  • 7,500 pcs$0.02825
  • 15,000 pcs$0.02511
  • 37,500 pcs$0.02354
  • 52,500 pcs$0.02093

Taldea zenbakia:
S1GHE3_A/I
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 400V 1A DO214AC. Rectifiers 1A 400V 40A@8.3ms Single Die Auto
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - FETak, MOSFETak - Bakarrak, Diodoak - Zener - Bakarka, Diodoak - RF, Potentzia kontrolatzeko moduluak, Transistoreak - IGBTak - Arrays, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Transistoreak - Xede Berezia and Transistoreak - IGBTak - Moduluak ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division S1GHE3_A/I electronic components. S1GHE3_A/I can be shipped within 24 hours after order. If you have any demands for S1GHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1GHE3_A/I Produktuen atributuak

Taldea zenbakia : S1GHE3_A/I
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 400V 1A DO214AC
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 400V
Oraingoa - Batez besteko laukizatua (Io) : 1A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 1A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 1.8µs
Oraingoa - alderantzizko ihesa @ Vr : 1µA @ 400V
Edukiera @ Vr, F : 12pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AC, SMA
Hornitzaileentzako gailu paketea : DO-214AC (SMA)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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