BAS19-HE3-18 Prezioak (USD) [2884683piezak Stock]
- 1 pcs$0.01282
- 10,000 pcs$0.01186
- Taldea zenbakia:
- BAS19-HE3-18
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Tiristorrak - SCRak - Moduluak, Transistoreak - JFETak, Transistoreak - Bipolarrak (BJT) - Bakarka, Transistoreak - FETak, MOSFETak - RF, Tiristoreak - DIACak, SIDACak and Transistoreak - Bipolarrak (BJT) - Matrizeak ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division BAS19-HE3-18 electronic components. BAS19-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAS19-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS19-HE3-18 Produktuen atributuak
Taldea zenbakia :
BAS19-HE3-18
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 100V 200MA SOT23
Series :
Automotive, AEC-Q101
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
100V
Oraingoa - Batez besteko laukizatua (Io) :
200mA
Tentsioa - Aurrera (Vf) (Max) @ If :
1.25V @ 200mA
Abiadura :
Small Signal =< 200mA (Io), Any Speed
Alderantzizko berreskurapen denbora (trr) :
50ns
Oraingoa - alderantzizko ihesa @ Vr :
100nA @ 100V
Edukiera @ Vr, F :
5pF @ 0V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
TO-236-3, SC-59, SOT-23-3
Hornitzaileentzako gailu paketea :
SOT-23
Eragiketa tenperatura - Junction :
-55°C ~ 150°C
Azken berriak
Era berean, interesatuko zaizu
-
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
-
BAL99E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Pieza beroak
- SBYV26C-5001M3/73
- EGP10DHM3/73
- CD0805-B140
- RC 2V1
- 1N648-1
- S42100F
- DSA26G
- CDBMT280-HF
- STPS20SM100SG-TR
- IDT04S60CHKSA1
- R5110410XXWA
- QRS1220T30
- R36100
- GUR460-E3/54
- 1N4948GP/54
- 1N4005GPHE3/54
- FGP50CHE3/73
- FGP10BHE3/73
- IDD09SG60CXTMA1
- S3580
- PR1001L-T
- VS-12TQ035STRRPBF
- BYT03-400RL
- 1N3070
- 1N4005GP
- DL4004-TP
- RS1G/1
- RS2GA-13
- 8EWF12STR
- VSKE320-20
- S25120
- IRD3909
- DL4935-13
- SR102-T
- SF12-AP
- FES16CT-E3/45
- ESH1PDHM3/84A
- RB060MM-40TR
- GL41GHE3/97
- RF081M2STR