Vishay Semiconductor Diodes Division - BAW27-TAP

KEY Part #: K6455271

BAW27-TAP Prezioak (USD) [3340050piezak Stock]

  • 1 pcs$0.01107
  • 50,000 pcs$0.00930

Taldea zenbakia:
BAW27-TAP
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Diodoak - RF, Transistoreak - IGBTak - Arrays, Transistoreak - JFETak, Transistoreak - IGBTak - Bakarka, Tiristorrak - EKTak, Transistoreak - FETak, MOSFETak - Arrays and Transistoreak - Bipolarrak (BJT) - Bakarka ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division BAW27-TAP electronic components. BAW27-TAP can be shipped within 24 hours after order. If you have any demands for BAW27-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW27-TAP Produktuen atributuak

Taldea zenbakia : BAW27-TAP
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 60V 600MA DO35
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 60V
Oraingoa - Batez besteko laukizatua (Io) : 600mA (DC)
Tentsioa - Aurrera (Vf) (Max) @ If : 1.25V @ 400mA
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 6ns
Oraingoa - alderantzizko ihesa @ Vr : 100nA @ 60V
Edukiera @ Vr, F : 4pF @ 0V, 1MHz
Muntatzeko mota : Through Hole
Paketea / Kaxa : DO-204AH, DO-35, Axial
Hornitzaileentzako gailu paketea : DO-35
Eragiketa tenperatura - Junction : 175°C (Max)

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