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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. M393ABG40M5B-CYF

Samsung Semiconductor - M393ABG40M5B-CYF

KEY Part #: K7359917

[16672piezak Stock]

    Taldea zenbakia:
    M393ABG40M5B-CYF
    fabrikatzailea:
    Samsung Semiconductor
    Deskribapen zehatza:
    DDR4 RDIMM 256 GB 8R x 4 2933 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: GDDR6, MODULE, LPDDR3, GDDR5, LPDDR5, HBM Flarebolt, DDR4 and HBM Aquabolt ...
    Abantaila lehiakorra:
    We specialize in Samsung Semiconductor M393ABG40M5B-CYF electronic components. M393ABG40M5B-CYF can be shipped within 24 hours after order. If you have any demands for M393ABG40M5B-CYF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393ABG40M5B-CYF Produktuen atributuak

    Taldea zenbakia : M393ABG40M5B-CYF
    fabrikatzailea : Samsung Semiconductor
    deskribapena : DDR4 RDIMM 256 GB 8R x 4 2933 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample
    Series : DDR3
    DDR : DDR4
    DIMM Mota : RDIMM
    dentsitatea : 256 GB
    Rank x Org. : 8R x 4
    Abiadura : 2933 Mbps
    Tentsioa : 1.2 V
    Pin kopurua : 288
    Osagai Konposizio : (3DS 4H 16G x 4) x 36
    Produktuen Status : Sample

    Azken berriak

    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Automotive Driven by Small Packages Under the Hood
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Speed for the next generation of mobile devices
    How Will 5G Impact on Memory?
    Samsung Z-SSD SZ985
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
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