EGF1BHE3_A/H Prezioak (USD) [460696piezak Stock]
- 1 pcs$0.08029
- Taldea zenbakia:
- EGF1BHE3_A/H
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 100V 1A DO214BA. Rectifiers 1A,100V,50NS AEC-Q101 Qualified
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - IGBTak - Moduluak, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Tiristorrak - SCRak - Moduluak, Tiristoreak - TRIACak, Diodoak - Zener - Arrays, Transistoreak - Elkartze programagarria, Diodoak - RF and Tiristoreak - DIACak, SIDACak ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division EGF1BHE3_A/H electronic components. EGF1BHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGF1BHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1BHE3_A/H Produktuen atributuak
Taldea zenbakia :
EGF1BHE3_A/H
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 100V 1A DO214BA
Series :
Automotive, AEC-Q101, Superectifier®
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
100V
Oraingoa - Batez besteko laukizatua (Io) :
1A
Tentsioa - Aurrera (Vf) (Max) @ If :
1V @ 1A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
50ns
Oraingoa - alderantzizko ihesa @ Vr :
1µA @ 100V
Edukiera @ Vr, F :
15pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-214BA
Hornitzaileentzako gailu paketea :
DO-214BA (GF1)
Eragiketa tenperatura - Junction :
-65°C ~ 175°C
Azken berriak
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