VS-2EFH02HM3/I Prezioak (USD) [625017piezak Stock]
- 1 pcs$0.05918
- 10,000 pcs$0.05147
- 30,000 pcs$0.05083
- Taldea zenbakia:
- VS-2EFH02HM3/I
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 200V 2A DO219AB. Rectifiers Hypfst Rct 2A 200V
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristorrak - EKTak, Transistoreak - Bipolarrak (BJT) - Bakarka, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Transistoreak - Bipolarrak (BJT) - Matrizeak, Transistoreak - Xede Berezia, Diodoak - Zubi zatitzaileak, Diodoak - RF and Transistoreak - IGBTak - Bakarka ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division VS-2EFH02HM3/I electronic components. VS-2EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-2EFH02HM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-2EFH02HM3/I Produktuen atributuak
Taldea zenbakia :
VS-2EFH02HM3/I
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 200V 2A DO219AB
Series :
Automotive, AEC-Q101, FRED Pt®
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
200V
Oraingoa - Batez besteko laukizatua (Io) :
2A
Tentsioa - Aurrera (Vf) (Max) @ If :
950mV @ 2A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
25ns
Oraingoa - alderantzizko ihesa @ Vr :
2µA @ 200V
Edukiera @ Vr, F :
-
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-219AB
Hornitzaileentzako gailu paketea :
DO-219AB (SMF)
Eragiketa tenperatura - Junction :
-65°C ~ 175°C
Azken berriak
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VS-2EFH02HM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 2A DO219AB. Rectifiers Hypfst Rct 2A 200V
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