SBR2A40P1-7 Prezioak (USD) [618813piezak Stock]
- 1 pcs$0.05977
- 3,000 pcs$0.05384
- 6,000 pcs$0.05058
- 15,000 pcs$0.04731
- 30,000 pcs$0.04340
- Taldea zenbakia:
- SBR2A40P1-7
- fabrikatzailea:
- Diodes Incorporated
- Deskribapen zehatza:
- DIODE SBR 40V 2A POWERDI123. Schottky Diodes & Rectifiers 2.0A 40V Low VF
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristoreak - TRIACak, Tiristoreak - DIACak, SIDACak, Transistoreak - IGBTak - Bakarka, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Diodoak - Zener - Bakarka, Transistoreak - Xede Berezia, Transistoreak - IGBTak - Arrays and Transistoreak - Elkartze programagarria ...
- Abantaila lehiakorra:
- We specialize in Diodes Incorporated SBR2A40P1-7 electronic components. SBR2A40P1-7 can be shipped within 24 hours after order. If you have any demands for SBR2A40P1-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SBR2A40P1-7 Produktuen atributuak
Taldea zenbakia :
SBR2A40P1-7
fabrikatzailea :
Diodes Incorporated
deskribapena :
DIODE SBR 40V 2A POWERDI123
Series :
SBR®
Taldearen egoera :
Active
Diodo mota :
Super Barrier
Tentsioa - DC alderantzikatua (Vr) (Max) :
40V
Oraingoa - Batez besteko laukizatua (Io) :
2A
Tentsioa - Aurrera (Vf) (Max) @ If :
500mV @ 2A
Abiadura :
Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
-
Oraingoa - alderantzizko ihesa @ Vr :
100µA @ 40V
Edukiera @ Vr, F :
-
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
POWERDI®123
Hornitzaileentzako gailu paketea :
PowerDI™ 123
Eragiketa tenperatura - Junction :
-65°C ~ 150°C
Azken berriak
Era berean, interesatuko zaizu
-
RGL34B-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34D-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34B-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34J-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM
-
BYM07-200-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt
-
BYM07-100-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt
Pieza beroak
- SBYV26C-5001M3/73
- EGP10DHM3/73
- CD0805-B140
- RC 2V1
- 1N648-1
- S42100F
- DSA26G
- CDBMT280-HF
- STPS20SM100SG-TR
- IDT04S60CHKSA1
- R5110410XXWA
- QRS1220T30
- R36100
- GUR460-E3/54
- 1N4948GP/54
- 1N4005GPHE3/54
- FGP50CHE3/73
- FGP10BHE3/73
- IDD09SG60CXTMA1
- S3580
- PR1001L-T
- VS-12TQ035STRRPBF
- BYT03-400RL
- 1N3070
- 1N4005GP
- DL4004-TP
- RS1G/1
- RS2GA-13
- 8EWF12STR
- VSKE320-20
- S25120
- IRD3909
- DL4935-13
- SR102-T
- SF12-AP
- FES16CT-E3/45
- ESH1PDHM3/84A
- RB060MM-40TR
- GL41GHE3/97
- RF081M2STR