Vishay Semiconductor Diodes Division - S1AFJ-M3/6B

KEY Part #: K6428853

S1AFJ-M3/6B Prezioak (USD) [1160314piezak Stock]

  • 1 pcs$0.03364
  • 14,000 pcs$0.03347

Taldea zenbakia:
S1AFJ-M3/6B
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 600V 1A DO221AC. Rectifiers 1A, 600V, SLIM SMA, STD GPP, SM RECT
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Transistoreak - IGBTak - Bakarka, Transistoreak - JFETak, Tiristoreak - DIACak, SIDACak, Transistoreak - Elkartze programagarria, Diodoak - Zener - Arrays, Transistoreak - IGBTak - Arrays and Transistoreak - Xede Berezia ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division S1AFJ-M3/6B electronic components. S1AFJ-M3/6B can be shipped within 24 hours after order. If you have any demands for S1AFJ-M3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1AFJ-M3/6B Produktuen atributuak

Taldea zenbakia : S1AFJ-M3/6B
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 600V 1A DO221AC
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 600V
Oraingoa - Batez besteko laukizatua (Io) : 1A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 1A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 1.47µs
Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 600V
Edukiera @ Vr, F : 7.9pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-221AC, SMA Flat Leads
Hornitzaileentzako gailu paketea : DO-221AC (SlimSMA)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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