Vishay Semiconductor Diodes Division - GL41JHE3/97

KEY Part #: K6457815

GL41JHE3/97 Prezioak (USD) [695844piezak Stock]

  • 1 pcs$0.05316
  • 10,000 pcs$0.04817

Taldea zenbakia:
GL41JHE3/97
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 600V 1A DO213AB. Rectifiers 1 Amp 600 Volt 30 Amp IFSM
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - FETak, MOSFETak - Bakarrak, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - IGBTak - Arrays, Transistoreak - JFETak, Transistoreak - Xede Berezia, Transistoreak - Elkartze programagarria, Diodoak - Zener - Arrays and Transistoreak - Bipolarrak (BJT) - Matrizeak, alde ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division GL41JHE3/97 electronic components. GL41JHE3/97 can be shipped within 24 hours after order. If you have any demands for GL41JHE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GL41JHE3/97 Produktuen atributuak

Taldea zenbakia : GL41JHE3/97
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 600V 1A DO213AB
Series : SUPERECTIFIER®
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 600V
Oraingoa - Batez besteko laukizatua (Io) : 1A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 1A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : -
Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 600V
Edukiera @ Vr, F : 8pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-213AB, MELF (Glass)
Hornitzaileentzako gailu paketea : DO-213AB
Eragiketa tenperatura - Junction : -65°C ~ 175°C

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