Vishay Semiconductor Diodes Division - VS-2EFU06HM3/I

KEY Part #: K6436193

VS-2EFU06HM3/I Prezioak (USD) [76951piezak Stock]

  • 1 pcs$0.50813
  • 10,000 pcs$0.43643

Taldea zenbakia:
VS-2EFU06HM3/I
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 600V 2A DO219AB. Rectifiers If(AV) 2A Vr 600V AEC-Q101 Qualified
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Xede Berezia, Transistoreak - IGBTak - Moduluak, Transistoreak - IGBTak - Arrays, Tiristoreak - DIACak, SIDACak, Diodoak - Zener - Bakarka, Transistoreak - IGBTak - Bakarka, Transistoreak - Bipolarrak (BJT) - Matrizeak and Transistoreak - Bipolarrak (BJT) - Bakarka ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division VS-2EFU06HM3/I electronic components. VS-2EFU06HM3/I can be shipped within 24 hours after order. If you have any demands for VS-2EFU06HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EFU06HM3/I Produktuen atributuak

Taldea zenbakia : VS-2EFU06HM3/I
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 600V 2A DO219AB
Series : Automotive, AEC-Q101, FRED Pt®
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 600V
Oraingoa - Batez besteko laukizatua (Io) : 2A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.35V @ 2A
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 55ns
Oraingoa - alderantzizko ihesa @ Vr : 3µA @ 600V
Edukiera @ Vr, F : -
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-219AB
Hornitzaileentzako gailu paketea : DO-219AB (SMF)
Eragiketa tenperatura - Junction : -55°C ~ 175°C

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