BYG22BHE3_A/I Prezioak (USD) [506068piezak Stock]
- 1 pcs$0.07309
- 7,500 pcs$0.06623
- Taldea zenbakia:
- BYG22BHE3_A/I
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE AVALANCHE 100V 2A DO214AC. Rectifiers 2.0A,100V,25NS, AVAL AEC-Q101 Qualified
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, Diodoak - Zener - Bakarka, Transistoreak - JFETak, Diodoak - Errektifikatzaileak - Arrays, Diodoak - Zener - Arrays, Transistoreak - FETak, MOSFETak - RF, Tiristoreak - DIACak, SIDACak and Diodoak - Edukiera aldakorra (Varicaps, Varactors) ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division BYG22BHE3_A/I electronic components. BYG22BHE3_A/I can be shipped within 24 hours after order. If you have any demands for BYG22BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG22BHE3_A/I Produktuen atributuak
Taldea zenbakia :
BYG22BHE3_A/I
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE AVALANCHE 100V 2A DO214AC
Series :
Automotive, AEC-Q101
Taldearen egoera :
Active
Diodo mota :
Avalanche
Tentsioa - DC alderantzikatua (Vr) (Max) :
100V
Oraingoa - Batez besteko laukizatua (Io) :
2A
Tentsioa - Aurrera (Vf) (Max) @ If :
1.1V @ 2A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
25ns
Oraingoa - alderantzizko ihesa @ Vr :
1µA @ 100V
Edukiera @ Vr, F :
-
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-214AC, SMA
Hornitzaileentzako gailu paketea :
DO-214AC (SMA)
Eragiketa tenperatura - Junction :
-55°C ~ 150°C
Azken berriak
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