Vishay Semiconductor Diodes Division - BYG10GHE3_A/H

KEY Part #: K6439771

BYG10GHE3_A/H Prezioak (USD) [618118piezak Stock]

  • 1 pcs$0.05984
  • 7,200 pcs$0.05471

Taldea zenbakia:
BYG10GHE3_A/H
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE AVALANCHE 400V 1.5A DO214. Rectifiers 1.5A,400V,STD,AVAL AEC-Q101 Qualified
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Transistoreak - IGBTak - Moduluak, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Transistoreak - Bipolarrak (BJT) - Matrizeak, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - IGBTak - Arrays, Transistoreak - Xede Berezia and Transistoreak - JFETak ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division BYG10GHE3_A/H electronic components. BYG10GHE3_A/H can be shipped within 24 hours after order. If you have any demands for BYG10GHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10GHE3_A/H Produktuen atributuak

Taldea zenbakia : BYG10GHE3_A/H
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE AVALANCHE 400V 1.5A DO214
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Avalanche
Tentsioa - DC alderantzikatua (Vr) (Max) : 400V
Oraingoa - Batez besteko laukizatua (Io) : 1.5A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.15V @ 1.5A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 4µs
Oraingoa - alderantzizko ihesa @ Vr : 1µA @ 400V
Edukiera @ Vr, F : -
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AC, SMA
Hornitzaileentzako gailu paketea : DO-214AC (SMA)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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