BYG10J-M3/TR Prezioak (USD) [742232piezak Stock]
- 1 pcs$0.05071
- 12,600 pcs$0.05046
- Taldea zenbakia:
- BYG10J-M3/TR
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE AVALANCHE 600V 1.5A. Rectifiers 1.5A,600V VGSC-STD Avalanche SMD
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Elkartze programagarria, Transistoreak - FETak, MOSFETak - Bakarrak, Tiristoreak - TRIACak, Transistoreak - Bipolarrak (BJT) - Matrizeak, Diodoak - Zubi zatitzaileak, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez and Diodoak - Zener - Arrays ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division BYG10J-M3/TR electronic components. BYG10J-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG10J-M3/TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG10J-M3/TR Produktuen atributuak
Taldea zenbakia :
BYG10J-M3/TR
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE AVALANCHE 600V 1.5A
Series :
Automotive, AEC-Q101
Taldearen egoera :
Active
Diodo mota :
Avalanche
Tentsioa - DC alderantzikatua (Vr) (Max) :
600V
Oraingoa - Batez besteko laukizatua (Io) :
1.5A
Tentsioa - Aurrera (Vf) (Max) @ If :
1.15V @ 1.5A
Abiadura :
Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
4µs
Oraingoa - alderantzizko ihesa @ Vr :
1µA @ 600V
Edukiera @ Vr, F :
-
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-214AC, SMA
Hornitzaileentzako gailu paketea :
DO-214AC (SMA)
Eragiketa tenperatura - Junction :
-55°C ~ 150°C
Azken berriak
Era berean, interesatuko zaizu
-
VS-6EWL06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 6A TO252AA. Rectifiers 6A 600V 59ns Ultrafast
-
SD103A-TAP
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V SGL DO35. Schottky Diodes & Rectifiers 5uA 40 Volt 15A IFSM
-
BAV19-TAP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 250MA DO35. Diodes - General Purpose, Power, Switching 120 Volt 625mA
-
BAV17-TR
Vishay Semiconductor Diodes Division
DIODE GEN PURP 20V 250MA DO35. Diodes - General Purpose, Power, Switching 25 Volt 625mA
-
1N4454-TAP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA DO204AH. Rectifiers Vr/100V Io/10mA
-
1N4454-TR
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA DO204AH. Diodes - General Purpose, Power, Switching Vr/100V Io/10mA
Pieza beroak
- IDD12SG60CXTMA2
- S1MFL RVG
- RGP10J-5025M3/73
- JAN1N1190
- R4260F
- R9G22011ASOO
- MURS120HE3/52T
- IDW12G65C5FKSA1
- SB040-E3/54
- NSRM30CM3T5G
- AR3PJHM3/86A
- VS-60CPF02PBF
- VS-150SQ035
- RGP02-14E-M3/73
- RS1GHE3/5AT
- RGP5020HE3/54
- SB160A-E3/73
- GP15KHE3/73
- 1N4937L-T
- MR7510-BP
- JAN1N6629US
- STTH40P03SFP
- BAS29_D87Z
- D4015L
- VS-12TQ040PBF
- SS16T3
- MBRB745
- RS3G-13
- 20ETS12S
- 1PS59SB20,115
- MBRM120ET1H
- ER1D-TP
- 1N4935-TP
- MUR110-AP
- STPS2H100UF
- RU 2V1
- SK56C M6G
- ESH2CHE3_A/I
- BA159GPE-E3/73
- LL4448-GS08