Vishay Semiconductor Diodes Division - ES2DHE3J/52T

KEY Part #: K6443590

[2739piezak Stock]


    Taldea zenbakia:
    ES2DHE3J/52T
    fabrikatzailea:
    Vishay Semiconductor Diodes Division
    Deskribapen zehatza:
    DIODE GEN PURP 200V 2A DO214AC.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristoreak - TRIACak, Tiristorrak - EKTak, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Diodoak - Zener - Bakarka, Transistoreak - Bipolarrak (BJT) - Bakarka, Transistoreak - Elkartze programagarria and Transistoreak - FETak, MOSFETak - Arrays ...
    Abantaila lehiakorra:
    We specialize in Vishay Semiconductor Diodes Division ES2DHE3J/52T electronic components. ES2DHE3J/52T can be shipped within 24 hours after order. If you have any demands for ES2DHE3J/52T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ES2DHE3J/52T Produktuen atributuak

    Taldea zenbakia : ES2DHE3J/52T
    fabrikatzailea : Vishay Semiconductor Diodes Division
    deskribapena : DIODE GEN PURP 200V 2A DO214AC
    Series : -
    Taldearen egoera : Discontinued at Digi-Key
    Diodo mota : Standard
    Tentsioa - DC alderantzikatua (Vr) (Max) : 200V
    Oraingoa - Batez besteko laukizatua (Io) : 2A
    Tentsioa - Aurrera (Vf) (Max) @ If : 900mV @ 2A
    Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
    Alderantzizko berreskurapen denbora (trr) : 30ns
    Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 200V
    Edukiera @ Vr, F : 18pF @ 4V, 1MHz
    Muntatzeko mota : Surface Mount
    Paketea / Kaxa : DO-214AC, SMA
    Hornitzaileentzako gailu paketea : DO-214AC (SMA)
    Eragiketa tenperatura - Junction : -55°C ~ 150°C

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