Vishay Semiconductor Diodes Division - G2SBA80-M3/51

KEY Part #: K6541300

[12422piezak Stock]


    Taldea zenbakia:
    G2SBA80-M3/51
    fabrikatzailea:
    Vishay Semiconductor Diodes Division
    Deskribapen zehatza:
    BRIDGE RECT 1PHASE 800V 1.5A GBL.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Elkartze programagarria, Transistoreak - FETak, MOSFETak - Arrays, Transistoreak - Bipolarrak (BJT) - Bakarka, Tiristorrak - EKTak, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Transistoreak - Bipolarrak (BJT) - Matrizeak, Diodoak - Edukiera aldakorra (Varicaps, Varactors) and Transistoreak - Xede Berezia ...
    Abantaila lehiakorra:
    We specialize in Vishay Semiconductor Diodes Division G2SBA80-M3/51 electronic components. G2SBA80-M3/51 can be shipped within 24 hours after order. If you have any demands for G2SBA80-M3/51, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    G2SBA80-M3/51 Produktuen atributuak

    Taldea zenbakia : G2SBA80-M3/51
    fabrikatzailea : Vishay Semiconductor Diodes Division
    deskribapena : BRIDGE RECT 1PHASE 800V 1.5A GBL
    Series : -
    Taldearen egoera : Obsolete
    Diodo mota : Single Phase
    Teknologia : Standard
    Tentsioa - Alderantzikatua (Max) : 800V
    Oraingoa - Batez besteko laukizatua (Io) : 1.5A
    Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 750mA
    Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 800V
    Eragiketa tenperatura : -55°C ~ 150°C (TJ)
    Muntatzeko mota : Through Hole
    Paketea / Kaxa : 4-SIP, GBL
    Hornitzaileentzako gailu paketea : GBL

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