Vishay Semiconductor Diodes Division - BAL99-HE3-08

KEY Part #: K6458614

BAL99-HE3-08 Prezioak (USD) [3181000piezak Stock]

  • 1 pcs$0.01227
  • 15,000 pcs$0.01221

Taldea zenbakia:
BAL99-HE3-08
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 70V 250MA SOT23. Diodes - General Purpose, Power, Switching 70 Volt 450mA 6ns 250 mA IFSM
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - Bipolarrak (BJT) - Bakarka, Diodoak - Zener - Bakarka, Transistoreak - JFETak, Transistoreak - IGBTak - Moduluak, Transistoreak - Bipolarrak (BJT) - Matrizeak, Transistoreak - IGBTak - Bakarka and Transistoreak - Bipolarrak (BJT) - Matrizeak, alde ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division BAL99-HE3-08 electronic components. BAL99-HE3-08 can be shipped within 24 hours after order. If you have any demands for BAL99-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAL99-HE3-08 Produktuen atributuak

Taldea zenbakia : BAL99-HE3-08
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 70V 250MA SOT23
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 70V
Oraingoa - Batez besteko laukizatua (Io) : 250mA
Tentsioa - Aurrera (Vf) (Max) @ If : 1.25V @ 150mA
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 6ns
Oraingoa - alderantzizko ihesa @ Vr : 2.5µA @ 70V
Edukiera @ Vr, F : 1.5pF @ 0V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3
Hornitzaileentzako gailu paketea : SOT-23
Eragiketa tenperatura - Junction : -55°C ~ 150°C

Era berean, interesatuko zaizu
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode