Vishay Semiconductor Diodes Division - BYG10M-M3/TR

KEY Part #: K6439633

BYG10M-M3/TR Prezioak (USD) [703168piezak Stock]

  • 1 pcs$0.05352
  • 12,600 pcs$0.05326

Taldea zenbakia:
BYG10M-M3/TR
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5A,1000V VGSC-STD Avalanche SMD
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Elkartze programagarria, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - IGBTak - Bakarka, Tiristoreak - TRIACak, Transistoreak - JFETak, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Diodoak - RF and Tiristorrak - EKTak ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division BYG10M-M3/TR electronic components. BYG10M-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG10M-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10M-M3/TR Produktuen atributuak

Taldea zenbakia : BYG10M-M3/TR
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE AVALANCHE 1KV 1.5A
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Avalanche
Tentsioa - DC alderantzikatua (Vr) (Max) : 1000V
Oraingoa - Batez besteko laukizatua (Io) : 1.5A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.15V @ 1.5A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 4µs
Oraingoa - alderantzizko ihesa @ Vr : 1µA @ 1000V
Edukiera @ Vr, F : -
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AC, SMA
Hornitzaileentzako gailu paketea : DO-214AC (SMA)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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